| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemical amplification type resist composition which can suppress the dimples produced when using a halftone phase shift mask and permits the strict control of the variation of resist pattern sizes per unit temperature in order to cause the thermal flow of the resist pattern after development. <P>SOLUTION: The positive resist composition for thermal processes is the positive resist composition for forming the resist hole pattern by a lithography method using the halftone phase shift mask and contains (A) a resin component in which the solubility in an alkali is increased by an acid, (B) a compound which generates an acid by irradiation with radiation, (C) a compound having at least two vinyl ether groups which form crosslinkage by reacting with the resin component (A) by heating, and (D) an organic amine. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
