| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method of manufacturing semiconductor device which can easily and accurately realize control of the projection amount of a through-electrode from the rear surface. SOLUTION: The method of manufacturing semiconductor device includes the steps of forming a dent 7 to the substrate body 6 including a semiconductor circuit 2 at the surface thereof, forming an insulation film 8 on the internal wall surface of the dent 7, forming an embedded electrode 15 which is used as a through-electrode 5 by embedding a conductive material to the dent 7 through an insulation film 8, forming a through-electrode 5 by eliminating the rear side of the substrate body 6 for the surface until the end surface of the embedded electrode 15 is exposed, forming an anode oxide film 9 through anode oxidation of the rear surface of the substrate body 6, and forming a semiconductor substrate 4 by eliminating the anode oxide film 9 through the etching process. COPYRIGHT: (C)2004,JPO&NCIPI
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