| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of securing a resistance value required for a circuit, and to provide a method of manufacturing and designing the semiconductor device. SOLUTION: The method of forming a capacitor C comprises the steps of forming the capacitor C on a silicon substrate 1 by laminating a polysilicon film 3 through a silicon oxide film 2, forming a first interlayer insulating layer 4 on the upper surface of the film 3, opening a contact hole 1H in the layer 4, forming an aluminum wiring layer 5 on the upper surface of the layer 4, forming a second interlayer insulating layer 6 on the upper surface of the layer 5, opening via holes 2H of the number according to the capacitance of the capacitor C in the layer 6, and forming the layer 5 on the upper surface of the via holes 2H. COPYRIGHT: (C)2004,JPO&NCIPI
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