发明名称 Semiconductor device and manufacturing method therefor
摘要 A semiconductor device is produced using a lead frame whose size is smaller than a prescribed center area of a semiconductor chip surrounded by its bonding pads, which are connected with electrodes supported by electrode supports and interconnected with outer frames and an intermediate frame of the lead frame via bonding wires. A series of projections and hollows are formed on the outer frames, wherein the electrode supports are interconnected with the hollows of the outer frames respectively. The semiconductor chip combined with the lead frame, is integrally enclosed in a resin under the condition where only the electrode surfaces are exposed to the exterior, thus forming a resin package. Then, the electrode supports locating the electrodes are cut out and partially removed, so that the electrodes are made electrically independent from each other.
申请公布号 US2004164399(A1) 申请公布日期 2004.08.26
申请号 US20040780723 申请日期 2004.02.19
申请人 SAITOH HIROSHI 发明人 SAITOH HIROSHI
分类号 H01L23/12;H01L21/56;H01L23/31;H01L23/495;H01L23/50;(IPC1-7):H01L23/495;H01L21/44 主分类号 H01L23/12
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