TRANSMISSION MASK WITH DIFFERENTIAL ATTENUATION TO IMPROVE ISO-DENSE PROXIMITY
摘要
An apparatus, system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings.
申请公布号
WO2004072734(A2)
申请公布日期
2004.08.26
申请号
WO2004EP01216
申请日期
2004.02.10
申请人
INFINEON TECHNOLOGIES AG;UNITED MICROELECTRONICS CO:;LIN, BENJAMIN;LIU, DANIEL;SCHMIDT, SEBASTIAN