| 摘要 |
PURPOSE: A method for forming a conductive interconnection of a semiconductor device is provided to reduce contact resistance by using a bit line with a stacked structure of a polysilicon layer and a tungsten silicide layer. CONSTITUTION: A word line(2) is formed on a substrate(1) having n+ and p+ junction regions(3,4). An insulating layer(5) is formed on the entire surface of the resultant structure. A doped polysilicon layer(6) is formed on the insulating layer. Bit line contact holes are formed to expose the n+ and p+ junction regions by etching the polysilicon layer and the insulating layer. A tungsten silicide layer(7) is formed to connect the junction regions through the contact holes. A bit line is then formed by patterning the tungsten silicide layer and the polysilicon layer.
|
