| 摘要 |
PROBLEM TO BE SOLVED: To provide the nonvolatile semiconductor memory device of a laminated gate insulating film structure which can surely protect an oxide aluminum trap insulating film. SOLUTION: The nonvolatile semiconductor memory device has a semiconductor substrate, a laminated gate insulating film formed on the semiconductor substrate, a gate electrode formed on the laminated gate insulating film, and a pair of impurity diffusion regions formed in a position holding the gate electrode therebetween in a semiconductor substrate surface. The laminated gate insulating film has the four-layer structure of a tunnel insulating film, an oxide aluminum trap insulating film, a top insulating film, and a cover insulating film protecting the oxide aluminum trap insulating film and the top insulating film in order from the semiconductor substrate side. COPYRIGHT: (C)2004,JPO&NCIPI
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