| 摘要 |
PROBLEM TO BE SOLVED: To reduce the leakage current of a transistor without giving an influence to a high-speed operation in an LSI employing a CMOS circuit. SOLUTION: A storage device in an LSI is divided into a plurality of storage element blocks 15, a storage holding voltage generation means 21 is disposed to generate a voltage lower than a global power supply voltage Vdd and necessary for holding the data of the storage device, and a power supply switching means 9 is disposed to supply the storage holding voltage obtained by the storage holding voltage generation means 21 instead of the global power supply voltage Vdd to a storage element block not in an access state or needing no high-speed operation. COPYRIGHT: (C)2004,JPO&NCIPI
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