发明名称 |
COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS |
摘要 |
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy ) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., < 500°C or <300°C) chemical vapor deposition processes, for fabrication of ULSI devices and device structures. |
申请公布号 |
WO2004044958(A3) |
申请公布日期 |
2004.08.26 |
申请号 |
WO2003US36097 |
申请日期 |
2003.11.12 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
WANG, ZIYUN;XU, CHONGYING;LAXMAN, RAVI, K.;BAUM, THOMAS, H.;HENDRIX, BRYAN;ROEDER, JEFFREY |
分类号 |
C07F7/02;C07F7/10;C07F7/12;C23C16/30;C23C16/34;C23C16/40;C30B25/02;C30B29/06;H01L21/314;H01L21/316;H01L21/318 |
主分类号 |
C07F7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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