FORMING METHOD OF TRENCH CAPACITOR AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device whose memory holding characteristic does not deteriorate even if a memory cell is fined.

SOLUTION: A trench is formed in the surface of the semiconductor substrate of a first conductivity type. A first insulating film is formed on the inner wall of the trench and a semiconductor pillar is buried in the trench on the first insulating film. The first insulating film and the semiconductor pillar positioned in the upper part of the trench are etched. A second insulating film is deposited on the exposed inner wall of the trench. The semiconductor pillar is etched and the first insulating film is etched. A plate electrode whose conductivity type is different from the first conductivity type is formed in an exposed inner wall of the trench by a gas phase diffusion method. A capacitor insulating film is formed on the plate electrode. A storage electrode is buried in the trench on the capacitor insulating film and the second insulating film.

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