| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic semiconductor device in which the on/off ratio of the current between a source and a drain can be increased, and at the same time, which can be operated by a low gate voltage. SOLUTION: This organic semiconductor device 10 is provided successively with an electrical insulating substrate 1, a third electrode layer (gate electrode) 2, an electrical insulating layer 3, first and second electrode layers (source electrode and drain electrode) 4 and 5 which are disposed in the same plane with an interval in between, and an organic semiconductor layer 6 which is formed to fill up the gap between the layers 4 and 5 and, at the same time, to cover the upper surfaces of the layers 4 and 5. The electrical insulating layer 3 has a layer (A) constituted of an electrical insulating material having a volume resistivity of >10<SP>6</SP>Ωcm and another layer (B) composed of another electrical insulating material having a specific inductive capacity of≥4. At least either one of the layers (A) and (B) is composed of an organic electrical insulating material. The layer 3a shown in the figure is composed of the organic electrical insulating material, but the layer 3b can be composed of the organic electrical insulating material or an inorganic electrical insulating material. COPYRIGHT: (C)2004,JPO&NCIPI |
