| 摘要 |
PROBLEM TO BE SOLVED: To avoid an etching obstruction of a Cr film and stripping of photoresist due to too much etching time when a multilayer Al/Cr film is patterned. SOLUTION: A Cr film 2 is deposited on a glass substrate 1 and subjected to O2 plasma processing thus forming a thin oxide film layer 3 on the surface of the Cr film 2. An Al film 4 is then deposited and photoresist 5 is patterned. Subsequently, The Al film 4 is wet etched using the resist 5 as a mask. The taper shape is realized by setting the composition ratio of a mixed acid etching liquid of phosphoric acid, nitric acid, and acetic acid such that the sum of concentration of nitric acid and acetic acid is not smaller than 16 wt%. The photoresist is stripped and removed prior to Cr wet etching and the oxide film layer 3 and the Cr film 2 are wet-etched using the Al film 4. COPYRIGHT: (C)2004,JPO&NCIPI |
