| 摘要 |
PROBLEM TO BE SOLVED: To provide a new semiconductor device for static electricity protection and a semiconductor device containing the semiconductor device for static electricity protection. SOLUTION: The semiconductor device 100 for static electricity protection contains a second-conductivity first well 51 and a first-conductivity second well 14 formed in a first-conductivity semiconductor substrate 10. The first well 51 contains a first-conductivity third well 24. The third well 24 contains a first-conductivity first impurity diffusing layer 22. The second well 14 contains a first-conductivity second impurity diffusing layer 26. The third well 24 is formed so that a depletion layer 24a may be formed under the well 24, and the well 24 may be connected to the semiconductor substrate 10 through the depletion layer 24a when a positive voltage of a prescribed value is impressed upon the first impurity diffusing layer 22. COPYRIGHT: (C)2004,JPO&NCIPI
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