| 摘要 |
PROBLEM TO BE SOLVED: To provide a method in which damage of a low k dielectric film caused by plasma treatment is repaired, the form of a dielectric film structure is maintained, later plasma treatment is made possible, and a resultant certain property can be selected. SOLUTION: The method of producing an integrated circuit comprises steps of forming an active device on the surface of a substrate, depositing a low k insulating layer that comprises a substituent-deficiency silicon oxide on the active device, treating the insulating layer using plasma, and then exposing the insulating layer to an active substance that reacts with molecules of the substituent-deficiency silicon oxide, which is changed through the treatment, and then forming a metal conductor near the insulating layer. COPYRIGHT: (C)2004,JPO&NCIPI
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