| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can relieve defects without inhibiting high speed, and also provide a method for controlling the device. SOLUTION: A memory cell line 21 in which data are stored with a data storage area comprising successive memory cells of prescribed plurality of N-bits as a unit, a redundancy memory cell set having areas 22, 23 and 24 which store preliminary data of N-bits, reference information and a flag, respectively, and input/output control circuits 33 to 35 are provided. The input/output circuits 33 to 35 maintain the approval for the input/output of the data to the specific data storage area if a prescribed flag area 24 is not flagged when they get access to the memory cell line 21. If the prescribed area is flagged, they prohibit the input/output of the data to a specific data storage area based on the reference information in the area 23, and permit the input/output of the data to the preliminary data storage area 22 in place of the specific data storage area. COPYRIGHT: (C)2004,JPO&NCIPI
|
