| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance the circuit yield of a nonvolatile resistance varying memory device, and to enhance memory performance. <P>SOLUTION: The method for manufacturing a resistance varying element comprises a step for preparing a silicon substrate, a step for forming a silicon oxide layer on the substrate, a step for forming a first metal layer of a metal selected from a group of platinum and iridium on the silicon oxide layer, a step for forming a thin perovskite metal oxide film on the first metal layer, a step for depositing a second metal layer of a metal selected from a group of platinum and iridium on the thin perovskite metal oxide film, a step for annealing a multilayer structure obtained by the step for depositing the second metal layer at a temperature of 400-700°C for 5 min. to 3 hours, and a step for varying resistance between the first metal layer and the second metal layer. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
