| 摘要 |
PROBLEM TO BE SOLVED: To improve electrical characteristics of a hot electron transistor where an active layer is formed of an intrinsic semiconductor. SOLUTION: The hot electron transistor is provided with a source electrode and a drain electrode, a hot electron creation layer and an intrinsic semiconductor region which are arranged in a track of a conduction electron between the source electrode and the drain electrode, a gate electrode for controlling voltage of the intrinsic semiconductor region, a first leakage current suppression layer which is installed in a path of a leakage current between the source electrode and the gate electrode and whose band gap is wider than the intrinsic semiconductor region, and a second leakage current suppression layer which is installed in a path of leakage current between the drain electrode and the gate electrode and whose band gap is wider than the intrinsic semiconductor region. Since the undesirable current route is interrupted by the first leakage current suppression layer and the second leakage current suppression layer, the electrical characteristics of the hot electron transistor can be improved. COPYRIGHT: (C)2004,JPO&NCIPI
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