发明名称 Integrated circuit having a non-volatile memory cell transistor as a fuse device
摘要 A semiconductor integrated circuit device has a fuse device that can be electrically disconnected without a breakage caused by using a laser beam or current. The semiconductor integrated circuit device employs, as the fuse device for storing status information, a MOSFET of a single polysilicon EEPROM-type cell manufactured through a process of fabricating a volatile semiconductor memory cell array.
申请公布号 US2004165457(A1) 申请公布日期 2004.08.26
申请号 US20040776600 申请日期 2004.02.12
申请人 PARK JONG-WOOK;LEE SANG-JAE;WON MYUNG-GYOO 发明人 PARK JONG-WOOK;LEE SANG-JAE;WON MYUNG-GYOO
分类号 G11C11/407;G11C7/00;G11C16/04;G11C29/00;H01L21/8247;H01L27/115;(IPC1-7):G11C7/00 主分类号 G11C11/407
代理机构 代理人
主权项
地址