Semiconductor device used as a storage device comprises a semiconductor substrate, plate electrode, capacitor insulating film, collar oxide film, storage electrode, capacitor extraction electrode, and trenched bridge region

摘要

Semiconductor device comprises a semiconductor substrate (1) of first conductivity, a plate electrode (12) of second conductivity, a capacitor insulating film formed on the base surface and side wall of the substrate, a collar oxide film (11) formed on the side wall, a storage electrode (15) formed on the plate electrode and insulating film, a capacitor extraction electrode (19) formed on the upper end of the collar oxide film and on the upper surface of the storage electrode, and a trenched bridge region (17) formed within the substrate. An independent claim is also included for a process for the production of the semiconductor device.