METHOD FOR CRYSTALLIZING AND GROWING GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LAYER

摘要

PURPOSE: A method for crystallizing and growing a gallium nitride compound semiconductor layer is provided to enhance light emission efficiency of an optical device by reducing crystalline defects. CONSTITUTION: The first gallium nitride compound semiconductor layer(3) includes In and Ga. The second gallium nitride compound semiconductor layer(2) and the third gallium nitride compound semiconductor layer(4) are formed on the first and the second sides of the gallium nitride compound semiconductor layer. Each composition of the second and the third gallium nitride compound semiconductor layer is different from the composition of the first gallium nitride compound semiconductor layer. One side of both sides of the first gallium nitride compound semiconductor layer is grown like a shape of a horn.