| 摘要 |
PROBLEM TO BE SOLVED: To form a heterojunction having superior characteristics, without depending on a complex epitaxial growth step and a hardware design of a MOVPE (metal oxide vapor phase epitaxy) reactor, etc. SOLUTION: The semiconductor heterojunction has a first region 116 being a first conductivity type formed from a first semiconductor material, a second region 108 being a second conductivity type formed from a second semiconductor material, and an intermediate layer 110 between the first region 116 and the second region 108. The band line-up of the first region 116, the intermediate layer 110, and the second region 108 has no bound states in its conduction band and no bound states in its valence band. COPYRIGHT: (C)2004,JPO&NCIPI
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