| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a high dielectric film is usable as a gate insulating film without causing deterioration in element characteristics in the case where MOS (metal oxide semiconductor) structures, each having a different film thickness, material or the like from the others, are mixedly present, and to provide a method of manufacturing the semiconductor device. SOLUTION: The semiconductor device has; the gate insulating film 23 which is formed in a first element region 14 on a silicon substrate 10 and has a silicon oxide film 18, the high dielectric film 20 formed on the silicon oxide film 18 and an oxygen diffusion prohibiting film 22 formed on the high dielectric film 20 with its oxygen diffusion coefficient being lower than that of the high dielectric film 20; a gate electrode 24 formed on the gate insulating film 23; a gate insulating film 25 which is formed in a second element region 16 on the silicon substrate 10 and has the high dielectric film 20 and the oxygen diffusion prohibiting film 22 formed on the high dielectric film 20; and the gate electrode 24 formed on the gate insulating film 25. COPYRIGHT: (C)2004,JPO&NCIPI
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