DENSITOMETRY METHOD OF DOPANT NEAR SEMICONDUCTOR WAFER SURFACE

摘要

PROBLEM TO BE SOLVED: To provide a method which can easily measure dopant density near a semiconductor wafer surface without needing to manufacture a standard substance for every device every test piece like SIMS. SOLUTION: This method contains a process for manufacturing an epitaxial wafer for measuring a CV characteristic by forming an epitaxial layer which has the same conduction type as a semiconductor wafer to be measured and whose thickness is D on the main surface of the semiconductor wafer, a process for calculating a profile P1of the depth direction of dopant density of the epitaxial wafer for measuring the CV characteristic by measuring the CV characteristic of the epitaxial wafer, and a process for obtaining a profile P0of the depth direction of dopant density of the semiconductor wafer measured by translating the profile P1of the depthwise direction of dopant density by the thickness D of the epitaxial layer in a main surface direction. COPYRIGHT: (C)2004,JPO&NCIPI