| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus in which a substrate is heated by a lamp heater and the substrate can be heated rapidly to a target temperature while keeping the in-plane temperature uniformity of the substrate by solving the problem that the assurance of the in-plane temperature uniformity of a wafer is difficult when the heating quantity is increased at a particular part in the substrate, for instance at its central part because other parts such as its peripheral parts are also undesiredly heated at the same time. SOLUTION: In this substrate processing apparatus having a processing chamber for accommodating and processing a substrate and a heating means for heating the substrate, the heating means comprises a plurality of ring-shape lamp heaters which are different in radius from each other and are arranged concentrically. COPYRIGHT: (C)2004,JPO&NCIPI
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