| 摘要 |
PROBLEM TO BE SOLVED: To lower through dislocation density, to reduce surface roughness and to prevent deterioration of roughness on a surface and an interface at the time of thermal treatment in a device manufacture process and the like. SOLUTION: A manufacturing method of the semiconductor has a first layer forming process, a second layer forming process, a thermal treatment process and a polishing process. In the first layer forming process, film thickness of a first SiGe layer 2 is set in such a way that it is thinner than twice as much as critical film thickness where dislocation occurs due to increase of film thickness and a lattice is relieved. In the second layer forming process, an inclination component region is formed where a Ge composition ratio of the second SiGe layer 3 is lower than the maximum value in the layer of the Ge composition ratio in the first SiGe layer 2 on a contact face with the first SiGe layer 2 or Si, and the Ge composition ratio gradually increases toward a surface in at least a part. COPYRIGHT: (C)2004,JPO&NCIPI
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