| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device having high reliability by suppressing the generation and the growth of a fluoride on the front surface of a pad and to provide a semiconductor device. SOLUTION: A protective film made of an insulating silicon compound is formed on metal wiring to become a pad (step S1). Then, in order to form a pad opening in response to at least the metal wiring in the protective film, a step of working including a dry etching step by a fluorine gas is performed (step S2). At this time, a fluorine component is retained on the front surface of the opened pad. Then, the metal wiring is exposed to an inert gas plasma in the same processing apparatus in which a vacuum state in this dry etching step is maintained. That is, the front surface of the metal wiring of the pad opening is physically etched (step S3). COPYRIGHT: (C)2004,JPO&NCIPI
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