| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor fabricated by a patterning method having a capability of forming a semiconductor channel layer of a submicron order, and a manufacturing method having mass productivity adaptable to a large area. SOLUTION: A thin film transistor formed on a substrate 1 having a micromachined protruding/recessed surface 2 wherein a source and a drain are formed at adjacent protrusions of the protruding/recessed surface 2 and a channel and a gate are formed in the recess region between the protrusions. In the recess region, a gate electrode 5, a gate insulation film 6, and a semiconductor channel layer 7 are formed sequentially upward from the bottom face of the recess. In the thin film transistor, the protruding/recessed surface is preferably formed of curing resin, the semiconductor composing the thin film transistor is polysilicon or an organic semiconductor material, and the substrate is composed of glass, plastic or their composite material. COPYRIGHT: (C)2004,JPO&NCIPI
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