| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase epitaxial growth system in which the flow rate of material gas can be made substantially uniform over the entire width of a substrate even when a reaction tube is slightly wider than the substrate or a substrate holder. SOLUTION: The vapor phase epitaxial growth system comprises a material gas introduction pipe 11, the reaction tube 21 connected with the material gas introduction pipe 11, an exhaust pipe 31 for exhausting reacted gas connected with the reaction tube 21, and a substrate support 42 for holding the substrate 41 on the substantially same plane as the lower inner wall face 22 of the reaction tube 21. A pair of partition plates 32 are provided in the exhaust pipe 31 in order to separate the exhaust pipe 31 into a side wall side exhaust pipe 33 and a central exhaust pipe 34. COPYRIGHT: (C)2004,JPO&NCIPI
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