发明名称 |
Trench filling process for preventing formation of voids in trench |
摘要 |
Embodiments of the present invention relate to a process for filling a trench structure of a semiconductor device to prevent formation of voids in the trench structure so as to minimize current leakage and provide excellent electrical properties. In one embodiment, a process for filling a trench of a semiconductor device comprises providing a semiconductor substrate; forming a silicon nitride layer on the semiconductor substrate; forming an oxide layer on the silicon nitride layer; partially removing the oxide layer, the silicon nitride layer and the semiconductor substrate to form at least one trench; forming a sacrificial oxide layer on sidewalls of the trench; removing the sacrificial oxide layer; performing an etching procedure to remove portions of the silicon nitride layer protruding from the sidewalls of the trench so as to form substantially even sidewalls of the trench; and forming a trench-fill layer to fill the trench and deposit on the oxide layer.
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申请公布号 |
US2004166635(A1) |
申请公布日期 |
2004.08.26 |
申请号 |
US20030652635 |
申请日期 |
2003.08.28 |
申请人 |
MOSEL VITELIC, INC. |
发明人 |
SUN PEI-FENG;LAI SHIH-CHI;TSENG MAO-SONG;CHUNG YI-FU |
分类号 |
H01L21/31;H01L21/336;H01L21/76;H01L21/762;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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