发明名称 Mask and its manufacturing method, exposure, and device fabrication method
摘要 A mask arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern so that where a virtual lattice is assumed which has a lattice point located at a center of the predetermined pattern, a center of the auxiliary pattern is offset from the lattice point of the virtual lattice.
申请公布号 US2004166422(A1) 申请公布日期 2004.08.26
申请号 US20040783218 申请日期 2004.02.20
申请人 YAMAZOE KENJI;SUZUKI AKIYOSHI;SAITOH KENJI 发明人 YAMAZOE KENJI;SUZUKI AKIYOSHI;SAITOH KENJI
分类号 H01L21/027;G03F1/00;G03F1/14;(IPC1-7):G03C5/00;G03F9/00;G03B27/42 主分类号 H01L21/027
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