发明名称 System and method for reducing trapped charge effects in a CMOS photodetector
摘要 A system and method for reducing image lag in a complementary metal oxide semiconductor (CMOS) photodetector is disclosed. In one embodiment, the invention is a a method for reducing image lag in an array of complementary metal oxide semiconductor (CMOS) photodetectors by forward biasing the photodetectors during a first time period to charge charge traps in the photodetectors, and reverse biasing the photodetectors during a second time period to remove charge from the photodetectors except the charge trapped in the charge traps.
申请公布号 US2004164225(A1) 申请公布日期 2004.08.26
申请号 US20030374279 申请日期 2003.02.26
申请人 BAER RICHARD L. 发明人 BAER RICHARD L.
分类号 H01L21/00;H01L27/00;H01L27/146;H01L31/00;H04N5/357;H04N5/374;(IPC1-7):H01L21/00 主分类号 H01L21/00
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