INTEGRATED SEMICONDUCTOR DEVICE AND METHOD TO MAKE SAME
摘要
A multiple-gate FET structure includes a semiconductor substrate. A gate region is formed on the semiconductor substrate. The gate region comprises a gate portion and a channel portion. The gate portion has at least two opposite vertical surfaces adjacent to the channel portion. A source region abuts the gate region at one end, and a drain diffusion region abuts the gate region at the other end.
申请公布号
WO2004073044(A2)
申请公布日期
2004.08.26
申请号
WO2004US04254
申请日期
2004.02.13
申请人
MASSACHUSETTS INSTITUTE OF TECHNOLOGY;CHENG, ZHIYUAN;FITZGERALD, EUGENE, A.;ANTONIADIS, DIMITRI, A.
发明人
CHENG, ZHIYUAN;FITZGERALD, EUGENE, A.;ANTONIADIS, DIMITRI, A.