发明名称 METHOD OF FORMING WIRING METAL LAYER AND WIRING METAL LAYER
摘要 PROBLEM TO BE SOLVED: To provide a method of forming wiring metal layer in a selected area of a substrate, and a wiring metal layer. SOLUTION: The method of forming wiring metal layer is a method of forming a wiring metal layer 30 in a selected area of a substrate 10. The method includes a step of making the area 16 on the substrate hydrophilic while making the other area hydrophobic, a step of agglutinating a dispersed solution containing microparticles 26 of a metal or a metal oxide on at least the hydrophilic area, which are protected by an organic substance 28 having a hydrophilic group in its molecule, and thereafter drying, and a step of binding the microparticles of the metal or the metal oxide. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004241758(A) 申请公布日期 2004.08.26
申请号 JP20030323548 申请日期 2003.09.16
申请人 ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO LTD 发明人 NAWAFUNE HIDEMI;AKAMATSU KENSUKE;NAKAMURA HIROYOSHI;KADO MASATERU
分类号 C23C18/04;C23C18/06;C23C18/08;C23C18/42;C25D5/34;C25D7/12;H01L21/288;H01L21/3205;H01L21/336;H01L23/52;H01L29/786;(IPC1-7):H01L21/320 主分类号 C23C18/04
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