发明名称 PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To eliminate a nonuniformity in the circumferential direction caused by the structure of an inductively coupled plasma processing apparatus. SOLUTION: In the plasma processing apparatus comprising an electrode 6 provided inside a processing chamber 1, induction coils 10 that are provided in an upper portion of the processing chamber 1 via an insulative layer 9 and equipped with annular electric conductor covers 11 in contact with the induction coils 10, and a high frequency electric source 13 for feeding electric power to the induction coils 10, induction currents are generated in the annular conductors 11 by the induction coils 10 to apply induction heating to plasma by the induction currents flowing through the conductors 11. An induced magnetic field generated by the induction coils 10 is shielded so as not to leak into a region where the plasma is generated. Since the currents for effecting the induction heating to the plasma flow through the annular conductors 11, there exists no terminal in contrary to the case with a normal coil, so that perfect circumferential directional uniformity of the plasma can be realized. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004241592(A) 申请公布日期 2004.08.26
申请号 JP20030028900 申请日期 2003.02.05
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 EDAMURA MANABU;MIYA TAKESHI;YOSHIOKA TAKESHI
分类号 C23C16/507;H01L21/3065;(IPC1-7):H01L21/306 主分类号 C23C16/507
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