SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method by which a semiconductor device etc., that is low in noise and high in output can be manufactured without increasing the number of processes. SOLUTION: In the semiconductor device, an npn transistor and a vertical pnp transistor are formed while using them in common. The npn transistor contains an n-type well region 34a formed on a p-type substrate 31 on which a p-type epitaxial layer 32 is formed in a MOS (metal oxide semiconductor) process at the time of forming a sensor cell in a second process and a CMOS (complementary metal oxide semiconductor) in the MOS process. The npn transistor also contains a p-type well region 37a formed on the substrate 31 in the second process and n+-type regions 51a and 51b for emitter and collector and a p+-type region 52a for base formed on the substrate 31 in the MOS process. The vertical pnp transistor contains a deep n-type well region 36b formed in the second process, a p-type well region 35c formed in the MOS process, and a shallow n-type well region 48a formed in the second process. The pnp transistor also contains p+-type regions 52b and 52c for collector and emitter and an n+-type region 51c for base formed in the MOS process. COPYRIGHT: (C)2004,JPO&NCIPI