| 摘要 |
PROBLEM TO BE SOLVED: To realize both high speed performance and a large light receiving area depending on the application in a single semiconductor light receiving element. SOLUTION: A substrate produced by sequentially growing an undoped InGaAs layer, an n-type InP layer on an n-type InP substrate by MOVPE is employed. Using an SiN film deposited by plasma CVD is employed as a passivation film for diffusion, zinc is diffused from an opening to form a diffusion area. It consists of a 80μm diameter first circular diffusion area 16, and a ring-like second diffusion area 18 (120μm inside diameter, 200μm outside diameter) spaced apart by 20μm from the first diffusion area with a part of 40μm width being cut off. An antireflection film (not shown) is provided on the entire surface of the substrate and first and second anode electrodes 20 and 22 are bonded, respectively, to the first and second diffusion areas 16 and 18. A common cathode electrode is provided on the rear surface of the n-type InP substrate. COPYRIGHT: (C)2004,JPO&NCIPI
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