| 摘要 |
PROBLEM TO BE SOLVED: To restrain magnetic interference between memory cells of adjacent lines in a magnetic semiconductor storage device. SOLUTION: When data are written, such a cancel current (-ΔIW(BL)) as cancels the induced magnetic field of a data write current (IW(BL)) flows in bit lines (BL2 and BL4) adjacent to a selection bit line (BL3) in the direction opposite to the data write current to the selection bit line. COPYRIGHT: (C)2004,JPO&NCIPI
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