发明名称 |
Methods for forming ruthenium films with beta-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the same |
摘要 |
Provided are 1) a method for forming a ruthenium film under a single process condition, whereby high adhesion of the ruthenium film to a lower layer is maintained, and 2) a method for manufacturing an metal-insulator-metal (MIM) capacitor using the ruthenium film forming method. The method for forming a ruthenium film includes supplying bis(isoheptane-2,4-dionato)norbornadiene ruthenium at a flow rate of 0.2-1 ccm and oxygen at a flow rate of 20-60 sccm, and depositing the ruthenium film at a temperature of 330-430° C. under a pressure of 0.5-5 Torr using chemical vapor deposition (CVD).
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申请公布号 |
US2004166671(A1) |
申请公布日期 |
2004.08.26 |
申请号 |
US20030657596 |
申请日期 |
2003.09.08 |
申请人 |
LEE KWANG-HEE;YOO CHA-YOUNG;LIM HAN-JIN;KIM SUNG-TAE;CHUNG SUK-JIN;KIM WAN-DON;CHUNG JUNG-HEE;LEE JIN-IL |
发明人 |
LEE KWANG-HEE;YOO CHA-YOUNG;LIM HAN-JIN;KIM SUNG-TAE;CHUNG SUK-JIN;KIM WAN-DON;CHUNG JUNG-HEE;LEE JIN-IL |
分类号 |
H01L21/205;C23C16/18;H01L21/02;H01L21/285;H01L21/8242;H01L21/8246;(IPC1-7):H01L21/00;H01L21/824;H01L21/44 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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