摘要 |
A method of protecting a SONOS flash memory cell (24) from UV-induced charging, including fabricating a SONOS flash memory cell (24) in a semiconductor device (10, 50); and depositing over the SONOS flash memory cell (24) at least one UV-protective layer (38, 46, 48 or 52), the UV-protective layer including a substantially UV-opaque material. A SONOS flash memory device (10, 50), including a SONOS flash memory cell (24); and at least one UV-protective layer (38, 46, 48 or 52), in which the UV-protective layer comprises a substantially UV-opaque material, is provided. |
申请人 |
ADVANCED MICRO DEVICES, INC.;NGO, MINH, VAN;KAMAL, TAZRIEN;RAMSBEY, MARK, T.;HALLIYAL, ARVIND;PARK, JAEYONG;CHENG, NING;ERHARDT, JEFF, P.;SHIELDS, JEFFREY, A.;FERGUSON, CLARENCE;HUI, ANGELA, T.;HUERTAS, ROBERT, A.;GOTTIPATI, TYAGAMOHAN |
发明人 |
NGO, MINH, VAN;KAMAL, TAZRIEN;RAMSBEY, MARK, T.;HALLIYAL, ARVIND;PARK, JAEYONG;CHENG, NING;ERHARDT, JEFF, P.;SHIELDS, JEFFREY, A.;FERGUSON, CLARENCE;HUI, ANGELA, T.;HUERTAS, ROBERT, A.;GOTTIPATI, TYAGAMOHAN |