| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which includes a barrier film having a large etching selecting ratio to an interlayer insulating film, an excellent Cu diffusion preventing function, low permittivity and excellent adhesive properties with Cu wiring, and to provide a method for manufacturing the same. <P>SOLUTION: The barrier film (e.g., a second barrier film 6) arranged between the wiring or a via and the interlayer insulating film of its upper layer is formed in the laminated structure of a plurality of films, each of which contains silicon, carbon (preferably silicon, carbon and nitrogen) in such a manner that contents of the carbon are different. Particularly, a low carbon concentration film 6a containing the small content of carbon is provided in the lower layer, and the structure that a high carbon concentration film 6b contains the large content of carbon in the lower layer, is provided. Thus, the prevention of the diffusion of the Cu, the high etching selection ratio and the proper adhesive properties with the Cu wiring are secured in the low carbon concentration film 6a, and the permittivity can be reduced in the high carbon concentration film 6b. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
