ASYMMETRICAL MOSFET LAYOUT FOR LARGE CURRENT HIGH-SPEED OPERATION

摘要

PROBLEM TO BE SOLVED: To provide the structure of a field effect transistor which can deal with a large current and is adapted to a high-speed operation, and to provide a method therefor. SOLUTION: The structure of the field effect transistor which can deal with the large current includes an interleaved source diffusion region and a drain diffusion region having a drain diffusion contact to a first metal level only in the case of drain diffusion in the drain diffusion. A second metal level covers the entire width of a device. A current flows mainly in a direction perpendicular to a source. The method therefor is provided. COPYRIGHT: (C)2004,JPO&NCIPI