| 摘要 |
PROBLEM TO BE SOLVED: To provide a CdTe type compound semiconductor single crystal useful as an electrooptic element for a voltage detector. SOLUTION: In case of the chlorine-dope, the CdTe type compound which has a chlorine concentration in the crystal of 0.1-5.0 ppmwt and has no deposit of 2μm or more on the crystal surface is used as a material for electrooptic elements. In case of the In-dope, among the CdTe type compound semiconductor single crystal obtained by the melt growing method which dopes 0.05-1.0 ppmwt of indium into the CdTe raw material melt, the part whose solidification ratio of the crystal of 0.9 or less is used as a material for electrooptic elements. COPYRIGHT: (C)2004,JPO&NCIPI
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