METHOD FOR FABRICATING MIM CAPACITOR

摘要

PURPOSE: A method for fabricating a MIM capacitor is provided to obtain a process margin in a cleaning process by forming a dielectric layer on a diffusion barrier of a metal line. CONSTITUTION: The first metal line(110a) and the second metal line(110b) are formed on a substrate(100). A diffusion barrier pattern for exposing the first metal line is formed on the substrate in order to prevent the damage of the second metal line. A dielectric layer is formed on the diffusion barrier pattern and the second metal line. A top electrode layer is formed on the dielectric layer. The first photoresist pattern is formed on the top electrode layer in order to define a capacitor region. A top electrode(140a) of a capacitor is formed by over-etching the exposed top electrode layer.