METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING NITRIDE LAYER AS ETCH STOP LAYER

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to minimize the plasma damage and to restrain polymers by using a nitride layer as an etch stop layer when forming a gate electrode. CONSTITUTION: A first oxide layer, a nitride layer, a second oxide layer and a photoresist pattern are sequentially formed on a substrate(10). A second oxide pattern(16) is formed by etching the second oxide layer to expose the nitride layer using the photoresist pattern as a mask. A nitride pattern(14) and a first oxide pattern(12) are formed by etching the nitride layer and the first oxide layer. The photoresist pattern is removed. A gate insulating layer is formed on the resultant structure. A gate electrode(22) is then formed by forming a metal film and polishing the metal film and the gate insulating layer to expose the second oxide pattern.