COMPLEMENTARY THIN FILM TRANSISTOR CIRCUIT, ELECTROOPTIC DEVICE, AND ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a complementary thin film transistor circuit that can be miniaturized by realizing a reliable contact with a simple constitution. SOLUTION: This complementary thin film transistor circuit is provided with a first-conductivity thin film transistor and a second-conductivity thin film transistor formed by using a plurality of single-crystal grains respectively formed around a plurality of starting point sections provided on the insulating surface of a substrate. The single-crystal grains are composed of at least first and second single-crystal grains adjoining each other through a crystal grain boundary. The first-conductivity thin film transistor is provided with at least a first-conductivity drain region formed closely to the crystal grain boundary in the first single-crystal grain. The second-conductivity thin film transistor is provided with at least a second-conductivity drain region formed closely to the crystal grain boundary in the second single-crystal grain. On the crystal grain boundary, a common electrode which takes out outputs from the first- and second-conductivity drain regions is provided. COPYRIGHT: (C)2004,JPO&NCIPI