SACRIFICIAL BENZOCYCLOBUTENE/NORBORNENE POLYMERS FOR MAKING AIR GAP SEMICONDUCTOR DEVICES
摘要
A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene) -2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene) -2-norbornene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene) -2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene) -2-norbornene.
申请公布号
WO2004073018(A2)
申请公布日期
2004.08.26
申请号
WO2004US02659
申请日期
2004.01.30
申请人
DOW GLOBAL TECHNOLOGIES INC.;NUI, JASON, Q.;LI, YONGFU;KRICHHOFF, ROBERT, A.;FOSTER, KENNETH, L.
发明人
NUI, JASON, Q.;LI, YONGFU;KRICHHOFF, ROBERT, A.;FOSTER, KENNETH, L.