| 摘要 |
PROBLEM TO BE SOLVED: To provide a charge transfer element having a structure of output part capable of suppressing a back gate effect. SOLUTION: A solid-state image pickup element is provided with a channel region 12, a first element region 18 arranged successively to the channel region 12, a reset transistor T<SB>r</SB>whose source region and drain region are formed in the first element region 18, a second element region 52, and a first transistor T<SB>d1</SB>whose source region S<SB>d1</SB>and drain region D<SB>d1</SB>are formed in the second element region 52 and gate electrode is connected with the source region of the reset transistor. Between the source region S<SB>d1</SB>and drain region D<SB>d1</SB>of the first transistor T<SB>d1</SB>, the effective impurity concentration of the surface region of the second element region 52 is made lower than the effective impurity concentration at the boundary region of the second element region 52 between a semiconductor substrate and the second element region 52. COPYRIGHT: (C)2004,JPO&NCIPI
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