| 摘要 |
PROBLEM TO BE SOLVED: To form an SOI (silicon on insulator) layer through the flattening and reduction in thickness in the required accuracy by preventing unwanted excessive etching during the local dry etching of the SOI layer of SOI wafer. SOLUTION: A wafer holding member 61 of the SOI wafer is provided with a wafer holding member body 611, a wafer hole 613 which is formed to the wafer holding member 611 to hold the SOI wafer W, and an internal flange 614 which is provided to the wafer holding member body in the upper surface side of the wafer hole 613 and is extended into this wafer hole 613. The wafer hole 613 has the depth which is substantially identical to thickness of an oxide film exposing region C of the SOI wafer W, and the internal flange 614 has the internal diameter which matches substantially with the external circumferential edge of the SOI layer A for masking the oxide film exposing region C of the external circumferential part of the SOI wafer W. COPYRIGHT: (C)2004,JPO&NCIPI
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