Semiconductor device and method for fabricating the same

摘要

A semiconductor device according to an embodiment of the invention includes: a trench capacitor formed in a trench in a semiconductor substrate; a transistor for driving the trench capacitor; a semi-cylindrical semiconductor layer in an upper part of the trench constructing a part of a path electrically connecting the trench capacitor and the transistor; and a low-resistant layer buried in the semi-cylindrical semiconductor layer and having resistivity lower than that of the semi-cylindrical semiconductor layer.