发明名称 |
Manufacturing method of semiconductor device |
摘要 |
There are provided a step of forming an insulating film over a semiconductor substrate, a step of exciting a plasma of a gas having a molecular structure in which hydrogen and nitrogen are bonded and then irradiating the plasma onto the insulating film, a step of forming a self-orientation layer made of substance having a self-orientation characteristic on the insulating film, and a step of forming a first conductive film made of conductive substance having the self-orientation characteristic on the self-orientation layer.
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申请公布号 |
US2004166596(A1) |
申请公布日期 |
2004.08.26 |
申请号 |
US20030695642 |
申请日期 |
2003.10.29 |
申请人 |
SASHIDA NAOYA;MATSUURA KATSUYOSHI;HORII YOSHIMASA;KURASAWA MASAKI;TAKAI KAZUAKI |
发明人 |
SASHIDA NAOYA;MATSUURA KATSUYOSHI;HORII YOSHIMASA;KURASAWA MASAKI;TAKAI KAZUAKI |
分类号 |
C23C16/40;H01L21/02;H01L21/314;H01L21/8242;H01L21/8246;H01L27/06;H01L27/105;H01L27/108;(IPC1-7):H01L21/00;H01L21/824 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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